Si wafer (100) 3"dia x 0.5 mm, 2sp P type, B doped, resistivities: 0.005-0.028 ohm-cm LiTaO3 Pocket Size (mm): L1

Pocket Size (mm): L1

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If a power failure occurs during testing

Dimension:  300 mm width  x 300 mm L   x 0

Growing Method:                  CZ

Si wafer (100) 3"dia x 0.5 mm, 2sp P type, B doped, resistivities: 0.005-0.028 ohm-cm LiTaO3 Pocket Size (mm): L1Single crystal Si Conductivity: P type ( B doped) Resistivity: 0. 005 0. 028 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 5 mm Orientation: <100> with orientation flat <110>.<110> Polish: Two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma