Surface chemical analysis. Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy Ingestion-build-228203 The tests are divided into

The tests are divided into five groups:

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Surface chemical analysis. Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy Ingestion-build-228203 The tests are divided into1 Scope This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 1010 atoms cm2 to 1 1014 atoms cm2; contamination elements with atomic surface densities from 5 108