Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005 Coated Electrode Cu <111> coated Si Wafer

Cu <111> coated Si Wafer (4 inch size)

Application Notes Replace tube for MTI tube furnaces Operating from 1600oC to 1750oC

no guaranty for the other brand crimper

Oxygen free copper gasket for high vacuum sealing of 61mmOTF-1200X-HP-30

This system provides most applications in battery and supercapacitor testing fields such as electrode materials research

Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005 Coated Electrode Cu <111> coated Si WaferSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: Two sides epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater