Mo Polycrystalline Substrate: 1"x1" x 0.5 mm, two sides polished - McMo252505S2Poly Orientation 111A wafer InGaAs EPI on InP

wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition

which is consumable

Chips will have passivation layer

Lib-LLC exhibits high lithium-ion conductivity and is primarily used in the manufacturing of solid-state lithium batteries

An optional tube rack for 15ml x 16 centrifuge tubes is available at extra cost

Mo Polycrystalline Substrate: 1"x1" x 0.5 mm, two sides polished - McMo252505S2Poly Orientation 111A wafer InGaAs EPI on InPPolycrystallline Mo substrate Purity: 99. 9% Average Grain Size: 10~50 Microns ( No annealing ) Substrate dimension: 1"x1" x 0. 5 mm Polishing: two sides polished Related Product Metallic Substrate A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater