SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 0mm Electrical Insulating Good Hot

0mm Electrical Insulating Good Hot Sealing Condition 180-190°C Moisture Vapor / O2 Transmission Rate 200ppm / 5 years  Solvent Retention Less than 5mg/m2 Appearance Within the sample of the limit Slip Factor

Suggested Sealing Method (parameter below may vary from case to case):

Packing:                             50g per bag packed in dry inert gas

Rolling pressing is necessary to ensure good density and adhesion of electrode materials to the current collector substrate after coating

Cutting Blade Come with 5 pcs of the impregnated diamond blade of 4" Dia × 0

SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 0mm Electrical Insulating Good HotSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 5x5 x 0. 3 + 0. 03 mm Polished: One sides epi polished on Si face Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 05 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26 eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35um