Ge Single Crystal Substrate, N-type Sb-doped (100) 5x5x 0.45mm 1sp, R<0.009ohm.cm Li-ion Battery Anode Powders 500ml Aluminum mixing container for

500ml Aluminum mixing container for desktop vacuum mixer SFM-7

A plane (11-20)  sapphire wafer

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Dipping/Pulling

Silicon Wafer Specifications:

Ge Single Crystal Substrate, N-type Sb-doped (100) 5x5x 0.45mm 1sp, R<0.009ohm.cm Li-ion Battery Anode Powders 500ml Aluminum mixing container forGe Wafer Specification Growing Method: CZ Wafer Size: 5x5 x0. 45 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: <0. 009 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal