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GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 2sp, (8.62-9.38) x 10^17 /cm^3 High Purity Chemical A-Z Degree of Substituon (D
GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 2sp, (8.62-9.38) x 10^17 /cm^3 High Purity Chemical A-Z Degree of Substituon (D
$183.43
Description
Degree of Substituon (D
Product options Product size: 80 - 200 mesh according to operating time
Crystal Purity
Such an alumina tube can be used at operating temperatures to 1700 oC in both oxidizing and reducing atmospheres
Working Voltage 110VAC
GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 2sp, (8.62-9.38) x 10^17 /cm^3 High Purity Chemical A-Z Degree of Substituon (DGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (8. 62 9. 38) x 10^17 cm^3 Mobility: 168 173 cm^2 V. S EPD: <5000 cm^2 Resistivity: (3. 96 4. 2)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers
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