Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10 La(x)Sr(1-x)MnO3 Elongation Rate (HT): 5

Elongation Rate (HT): 5

Major structural material: Cr Plated Steel

Please check the package's condition upon delivery

distribution across the heating zone

Coating area density: 29 ± 0

Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10 La(x)Sr(1-x)MnO3 Elongation Rate (HT): 5Single crystal Si Conductivity: N type ( P doped) Resistivity: 10 30ohm CM Size: 3" diameter x 0. 5 mm Orientation: (100) 4 Deg. Off Toward (110) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater