Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon Ingestion-build-117251 as single or double units

as single or double units

Is self-describing

nor does it include a blank SDS

4 Terms and definitions

that the nuts constituting the batch satisfy the requirements of BS EN 4048

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon Ingestion-build-117251 as single or double units1 Scope This International Standard specifies a secondary ion mass spectrometric method using magnetic sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single crystal, poly crystal, or amorphous silicon specimens with boron atomic concentrations between 1 1016 atoms cm3 and 1 1020 atoms cm3, and to crater