GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp Feeders Please click here to order

Please click here to order the plug)

Model EQ-Die-75D Die Sleeve Height 2 3/8" (60 mm) Inner Diameter 3" (76

One pack of 48173 accessories

Anti-explosion Port:

Polishing:  Two sides polished

GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp Feeders Please click here to orderGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5