Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm Additive Mobility: 126 cm^2/Vs

Mobility: 126 cm^2/Vs

GaN template is a cost effective way to replace GaN single crystal substrate

35 Crystalgrowth method  Top seed flux growth Crystal Structure Cubic

45Single crystal copper metallic substrate

0 um Specific Surface Area

Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm Additive Mobility: 126 cm^2/VsThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 1000 nm ( 10000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" x 0. 5mm Orientation: (100) + 1o Polish: one side polished Surface