Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 0.1-1.1 ohm-cm Au/Cr coated SiO2/Si Pouch Cell Assembling

Pouch Cell Assembling

Please store moisture-sensitive consumables in the vacuum storage box

55 lbs Certification CE Certified

Pressure Conversion Table (Notice the Load is not strictly linear to the Air Pressure):

Nominal FTO Film thickness: <150 nm

Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 0.1-1.1 ohm-cm Au/Cr coated SiO2/Si Pouch Cell AssemblingGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Ga doped Conductor type: P type Resistivity: 0. 1 1. 1 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: