Al2O3 - Sapphire Wafer 10x10x1.0mm, A plane (11-20), 1SP - ALA101010S1 Flanges Loading Current: 3A

Loading Current: 3A

1170°C ~ 1450°C (2138°F ~ 2642°F) in H2

Surface quality

4 @300K  at A axis ~~ 11

Model Number EQ-Die-15D-B Maximum Load 16 metric Ton (at room temperature)

Al2O3 - Sapphire Wafer 10x10x1.0mm, A plane (11-20), 1SP - ALA101010S1 Flanges Loading Current: 3AFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties Wafer size: 10 mm x 10 mm x 1. 0mm thick Orientation tolerance: + 0. 5 o. A plane orientation Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A 1 side polished Package: Each wafer is packed in 1000 class clean room with 100