Ge Substrate (110) 10x5x 0.5 mm, 1 SP, N-type Undoped .R>50 ohm.cm Si especially the die installation schematic

especially the die installation schematic

9 Ton force

30-200 cc/min

It's normal that the target pressure decreases a little bit during the pressure holding time

Temperature range: -40° C to +90° C

Ge Substrate (110) 10x5x 0.5 mm, 1 SP, N-type Undoped .R>50 ohm.cm Si especially the die installation schematicSpecifications Growing Method: CZ Wafer Size: 10x5x0. 5 mm Surface Polishing: one side optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater