+/- 0InP single crystal wafer Orientation: (100)+ 0. 5 degree Primary Flat: US(01 1)+ 0. 5 degree Secondary Flat: US(011) Size: 3" diameter x 0. 625 mm Growing Method: VGF Doping: Zn doped Conducting type: S C Polish: one side polished Resistivity: (4. 19 4. 73)E 2 ohm. cm Mobility: 72 74 cmE2 V. S EPD: <5000 cmE2Carrier Concerntration: (1. 79 2. 07)E18 cmE 3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> +/- 0"> +/- 0InP single crystal wafer Orientation: (100)+ 0. 5 degree Primary Flat: US(01 1)+ 0. 5 degree Secondary Flat: US(011) Size: 3" diameter x 0. 625 mm Growing Method: VGF Doping: Zn doped Conducting type: S C Polish: one side polished Resistivity: (4. 19 4. 73)E 2 ohm. cm Mobility: 72 74 cmE2 V. S EPD: <5000 cmE2Carrier Concerntration: (1. 79 2. 07)E18 cmE 3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> +/- 0"> +/- 0InP single crystal wafer Orientation: (100)+ 0. 5 degree Primary Flat: US(01 1)+ 0. 5 degree Secondary Flat: US(011) Size: 3" diameter x 0. 625 mm Growing Method: VGF Doping: Zn doped Conducting type: S C Polish: one side polished Resistivity: (4. 19 4. 73)E 2 ohm. cm Mobility: 72 74 cmE2 V. S EPD: <5000 cmE2Carrier Concerntration: (1. 79 2. 07)E18 cmE 3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp Se Orientation: <110> +/- 0 – drankurprakash.com

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InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp Se Orientation: <110> +/- 0

$804.42

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+/- 0">
Description

Orientation:              <110> +/- 0

The software tool includes:

Please consider using an electronic motor grinder to save lab cost

One plastic water-proof box is included to protect water from splashing during cutting

02 Package

InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp Se Orientation: <110> +/- 0InP single crystal wafer Orientation: (100)+ 0. 5 degree Primary Flat: US(01 1)+ 0. 5 degree Secondary Flat: US(011) Size: 3" diameter x 0. 625 mm Growing Method: VGF Doping: Zn doped Conducting type: S C Polish: one side polished Resistivity: (4. 19 4. 73)E 2 ohm. cm Mobility: 72 74 cmE2 V. S EPD: <5000 cmE2Carrier Concerntration: (1. 79 2. 07)E18 cmE 3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing

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