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SiC - 6H (0001), 10x10x0.26 mm , two sides polished Bi12GeO20 (BGO20) Note: EPI ready wafers
SiC - 6H (0001), 10x10x0.26 mm , two sides polished Bi12GeO20 (BGO20) Note: EPI ready wafers
$134.62
Description
Note: EPI ready wafers
Operation Manual
2 CFM @ 90 PSI
Power supply 110VAC 50/60 Hz Features Universal motor
K type thermocouple extension wire
SiC - 6H (0001), 10x10x0.26 mm , two sides polished Bi12GeO20 (BGO20) Note: EPI ready wafersSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 10x10 x 0. 26 + 0. 03 mm Polished: two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing: Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp: <25 um Micropipe
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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