coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia x0. 525 mm thickness Si wafer (Prime Grade) with thermal oxide: 300 nm thk P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , N A Package: One 1000 class clean room with 100 class plastic bag"> coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia x0. 525 mm thickness Si wafer (Prime Grade) with thermal oxide: 300 nm thk P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , N A Package: One 1000 class clean room with 100 class plastic bag"> coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia x0. 525 mm thickness Si wafer (Prime Grade) with thermal oxide: 300 nm thk P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , N A Package: One 1000 class clean room with 100 class plastic bag"> Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp High Purity Chemical A-Z Orientation: (100)+/-2 degree – drankurprakash.com

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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp High Purity Chemical A-Z Orientation: (100)+/-2 degree

$228.85

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Orientation:              (100)+/-2 degree

5 um (+/- 20%)

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Lattice constant at room temperature :   0

Two alumina rods

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp High Purity Chemical A-Z Orientation: (100)+/-2 degreeSpecifications: Cu <111> coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia x0. 525 mm thickness Si wafer (Prime Grade) with thermal oxide: 300 nm thk P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , N A Package: One 1000 class clean room with 100 class plastic bag

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