NdGaO3 (100) 10x3x0.5mm, 1 SP - NGOa100305S1 Max. current +10 mA 8%) for l = 633

8%) for l = 633 nm

Silicon Nitride Pellet Pressing Die

Doping:                                     Si doped

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Ionic Conductivity:              1

NdGaO3 (100) 10x3x0.5mm, 1 SP - NGOa100305S1 Max. current +10 mA 8%) for l = 633Single crystal NdGaO3 Substrate Size: 10mm x 3 mm x 0. 5 mm Orientation: (100) Polishing: one side polished. Surface roughness: < 5A Packing: in 1000 class clean room with plastic bagTypical Properties of NdGaO3 Structure: Orthohombic Lattice Constant(): a=5. 43 b=5. 50 c=7. 71 Melting Point: 1600 oC Density: 7. 57 g cm3 Thermo expansion: 7. 89 x10 6 k Dielectric constant 25 Loss tangent 3x10 3 Hardness 5. 9 ( Mohs) Customers Who Bought This Item Also