A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier"> A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier"> A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier"> InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished CdS Good lattice match with perovskite – drankurprakash.com

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InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished CdS Good lattice match with perovskite

$931.50

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Good lattice match with perovskite structure superconductors

Please keep the powder in the vacuum box to avoid moisture

Milling Media One group stainless steel milling ball is included for immediate use (10 sets of SS balls with sizes from 6-20mm Diameter)

Conductive type:        Si   P- type

Specifications/Model Number MSK-116A Edge Ironing Machine

InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished CdS Good lattice match with perovskite2" InSb wafer (N type, Te doped) Size: 2" dia x 0. 5mm thick with thickness tolerance + 25 um Orientation <111>A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier

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