Al2O3- Sapphire Wafer, C-plane (0001), 3" Dia.x0.5mm , 2SP Metallic Substrate A-Z Wafer size: 10 x 10

Wafer size: 10 x 10 x 1 mm thick

Nickel foam was carefully cleaned by concentrated HCl solution (37 wt

Typical Operation Procedures for Controlling the Pressure of Tube Furnace  Install feed valve (inlet) on one end of tube flange

1o to M-plane leftwards from the Primary

94mm  Flatness =  0

Al2O3- Sapphire Wafer, C-plane (0001), 3" Dia.x0.5mm , 2SP Metallic Substrate A-Z Wafer size: 10 x 10Features: Sapphire (single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Orientation: C axis[0001]( + 0. 3 Deg) with Standard Flat Diameter: 3" + 0. 3mm Thickness: 500um + 25 um Major Flat: A axis[11 20]+ 0. 2o Surface Finish: Front sides: Epi polished Ra<0. 5nm (by AFM) Back side: Epi polished , <0. 5nm(by AFM) TTV: < 10um Polished surface: Two side epi polished by special CMP