Ge Substrate (100) 5x 5x0.5 mm, 1 SP, Undoped ,N-type.R>50 ohm.cm Coated Electrode Thickness of Ta diffusion barrier:

Thickness of Ta diffusion barrier: 50 nm

Other Sapphire

A high voltage power supply (Pic 2)

Mica Disks Highest Grade V1

Orientation:                       (100)+/- 0

Ge Substrate (100) 5x 5x0.5 mm, 1 SP, Undoped ,N-type.R>50 ohm.cm Coated Electrode Thickness of Ta diffusion barrier:Specifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner