GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 2sp Orientation 010 3 conductor colors: black

3 conductor colors: black

Product Dimensions 1186mm(L) x 480mm(W) x 490mm(H) Warranty One year limited warranty with lifetime support

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Better mechanical strength and toughness to avoid short circuit caused by dendrite growth

TYPE:                                      NH20-210*210-24 mil

GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 2sp Orientation 010 3 conductor colors: blackGaAs single crystal wafer Growing Method: VGF Orientation: (111)A Primary Flat: US(0 11); Secondary Flat: US(2 1 1) Size: 4" dia x 0. 55 mm Polishing: Two sides polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 88 1. 98)E8 ohm. cm Carrier Concentration: N A Mobility: 4940 5060 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP