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Si Wafer (110), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) PbS Measured Content (mol%)
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Si Wafer (110), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) PbS Measured Content (mol%)
$100.80
Description
Measured Content (mol%)
Structure: Cubic
CdSe single crystal CdSe single crystal
Optional Crimping Die Core for 3-Electrode 2032 Coin Cell is available at extra cost
Polish: one side polished
Si Wafer (110), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) PbS Measured Content (mol%)Single crystal Si, Conductivity: N type ( undoped) Resistivity: >1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (110) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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