Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp Br This is fixed thickness precision

This is fixed thickness precision film applicator with four paths of 5

8 polymer battery analyzer clamp with temperature detector and cable for universal connecting (compatible for pouch cell and cylindrical cell

110V configuration is available at extra cost

Dual needle valves allow the simple

Copper gasket for threaded joint (1/4BSPP)

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp Br This is fixed thickness precisionSpecifications: Cu coated SiO2 Si Wafer (4 inch size) Thickness of Cu polycrystalline <111> film: 100 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, Singe side polished Resistivities: 1 20 ohm cm thermal oxide: 300 nm thickness Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag