InAs (100), P Type, Zn doped 10x10 x 0.5 mm, one side polished Orientation M-Plane (1-100) OD 54mm ID 40mm Length

OD    54mm   ID    40mm   Length    1000mm

Composition:    Bismuth Iron Oxide BiFeO3  Target

( You may use CIP to press again to increase density by about 5 - 10%

Conductive type:        Si   n-type

Vacuum grade rubber pipe is included for immediate use

InAs (100), P Type, Zn doped 10x10 x 0.5 mm, one side polished Orientation M-Plane (1-100) OD 54mm ID 40mm LengthInAs wafer P Type, Zn doped Size: 10x10x0. 5mm Orientation: <100> + 0. 50 Polishing: one side polishd Resistivities: 0. 0084 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 5. 3E18 cm3 Mobility 126 cm2 V. S Resistivity 0. 0084 ohm cm EPD 1. 2E4 cm 2