GaN Template on Sapphire, C plane,10x10 x0.5 mm , Film: 30 micron Thick Diamond on Silicon wafer Surface finish: One side optical

Surface finish:  One side optical polished

Al/CPP       more than 5N/15mm

Battery Holders

20 ns @ 470nm

Beware of short circuit damage to the unit due to leaking or a short distance between the charged syringe needle and drum collector

GaN Template on Sapphire, C plane,10x10 x0.5 mm , Film: 30 micron Thick Diamond on Silicon wafer Surface finish: One side opticalGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate Specifications Sizes 10mmx10mm x0. 5mm Substrate Sapphire, Orientation C (0001) + 1. 0 o Conduction Type: n type, Resistivity < 0. 5 Ohm cm Front Surface Finish (Ga Face) As grown