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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SP Dispensers & Feeders 60/40 and Surface Roughness Ra:

$52.84

Quantity
Description

60/40 and Surface Roughness Ra: < 0

Weight: 87

75E-3 Torr l/s

Part Number EQ-AL0605 Arbor Dia 0

Pressing Rod Diameter: 28mm ± 0

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SP Dispensers & Feeders 60/40 and Surface Roughness Ra:GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x3 x 0. 5mm Polishing: two sides polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 2. 0)E8 Ohm. cm Mobility: 5350 6380 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

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