Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cm GaN Template Small particles may slip into

Small particles may slip into the gap between the pushing rod and steel sleeve and cause damages to the sleeve during the compression

such as glass

Polyamide (JIS Z1714):                           0

(which can be attached to the magnetic plate at the stable and take off at easy) 4 set UP820-05 8" Sic sandpapers (2 of each at the mesh of 240#

driven gas crimper is not going to contaminate the high purity glove box atmosphere if the crimper is driven by the corresponding glove box gas

Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cm GaN Template Small particles may slip intoGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.