InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished CsPbBr3 25 mm +/- 0
$113.85
Description
25 mm +/- 0
SUPERSTRATE 996
Material Cubic Boron Nitride
respectively
-Thickness of highly oriented polycrystalline Mo <110> film: 500 nm on one side
InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished CsPbBr3 25 mm +/- 010x10x0. 45 mm InSb wafer (N type, Te doped) Size: 5x5x0. 3 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (0. 19 0. 5)E18 @77K Mobility >(3. 58 5. 6)E4 cm2 Vs EPD <1200 1500 cm 2
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 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished CsPbBr3 25 mm +/- 0){kind=link}
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