50 ohm-cm Al2O3 small-scale battery formationGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> 50 ohm-cm Al2O3 small-scale battery formation"> 50 ohm-cm Al2O3 small-scale battery formationGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> 50 ohm-cm Al2O3 small-scale battery formation"> 50 ohm-cm Al2O3 small-scale battery formationGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 small-scale battery formation – drankurprakash.com

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Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 small-scale battery formation

$401.93

Quantity
50 ohm-cm Al2O3 small-scale battery formation">
Description

small-scale battery formation

MTI has granted the patent 201120462024

Melting point:                                        710 oC

the PTFE flange may melt off if the furnace temperature is higher than 500ºC

Polarity: Ga-face

Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 small-scale battery formationGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal

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