(0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> (0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> (0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating Ga2O3-ß Temperature Resistance: 300 oC – drankurprakash.com

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InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating Ga2O3-ß Temperature Resistance: 300 oC

$419.18

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Temperature Resistance: 300 oC

which is of normal nature

(4'' to 2'')

Range 2: 0

The float is highly visible against a white background

InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating Ga2O3-ß Temperature Resistance: 300 oCInP single crystal wafer Orientation: (111)A Size: 2" diameter x 0. 35mm Doping: Fe doped Conducting type: Semi Insulating Resistivity:>(0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing

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