Ge (111), Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm Ge With 13mm (L) x 11mm

With 13mm (L) x 11mm (W) protrude current collector

Wafer Size:                      4" dia x   500 microns

We suggest cutting sample along with the included dressing stone (Glue sample and the dressing stone side by side and cut them together

and 35mm in height

A 500g pack of 3

Ge (111), Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm Ge With 13mm (L) x 11mmSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: One side epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater