GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron Coaters Dislocation Density <5x106cm-2

Dislocation Density           <5x106cm-2

45 GHz ±25 MHz

Adhesive Resin Layer (PPa): Acid-modified PP

(Note: MTI does not carry a warranty for the Laptops

Polished: two  sides

GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron Coaters Dislocation Density <5x106cm-2GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications Sizes 2 Round Dimensions 50. 8mm + 0. 25mm Substrate Sapphire, Orientation c axis (0001) + 1. 0 o Substrate Sapphirethickness: 0. 43mm+ 0. 025mm Conduction Type: N