Ge Wafer (111) 2" dia x 0.4 mm, 2SP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cm Saws 0 mA to 3000 mA

0 mA to 3000 mA

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Ge Wafer (111) 2" dia x 0.4 mm, 2SP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cm Saws 0 mA to 3000 mAGe Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 400 microns Surface Polishing: Two sides epi polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 035 0. 039 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: