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InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes Two Dimensional Crystal uniform temperature zone

$126.50

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uniform temperature zone

Revealing High Na-Content P2-Type Layered Oxides as Advanced Sodium-Ion Cathodes

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Semi-Conducting

which will keep the milling jar's temperature below 30°C

InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes Two Dimensional Crystal uniform temperature zoneGrowth method LEC Orientation (511) 0. 5 Deg Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration <7E17 ~ 1E18 cm3 Mobility >10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side

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