Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm Sodium-ion Battery Supplies 80L x 66W x 29H

80L x 66W x 29H (mm)

2-3/8" OD Alumina tube ( 95% Al2O3 material)

Includes easy to use and powerful software that allows you to graphically design your battery analysis routines and can simultaneously control over 100 UBA5s from one PC

Heating Jacket Dimension 111 mm O

and heat insulation materials are not covered by the warranty

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm Sodium-ion Battery Supplies 80L x 66W x 29HThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 300 nm (3000A) + 10% Growth method Dry oxidizing at 1000oC Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N Type P doped Resistivity: 1 10 ohm. cm Size: 4" + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click