GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.279 mm, 1sp Mixing Jars OF orientation: parallel {10-10} +/-

OF orientation: parallel {10-10} +/- 5 degree

~3 x10-4 @77K

Doping:                          Undoped

Air flow volume: 800 cmh  Fresh dry die flow: 500 cmh Dew point: < 60 oC in empty room

Please use alcohol to clean the pressing die every time before use and store it in a dry place with antirust oil after operation to avoid rusting on the surface

GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.279 mm, 1sp Mixing Jars OF orientation: parallel {10-10} +/-GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate. Specifications: Research Grade , about 90 % useful area Nominal GaN thickness: 0. 5? m 0. 1 ? m Front Surface finish (Ga face): <1nm RMS, As grown Back surface finish: as