Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 5-10 ohm-cm,25pcs/Pack Conductive Ceramic Substrates Growing Method: Bridgman method

Growing Method:    Bridgman method

and ceramics

Please click  picture below to find more equipment for preparing solid-state electrolyte

Options: Click on furnace picture (lower right) below to see how to insert an external thermocouple

Please see instructions below about changing the upper and lower die for converting the unit to MSK-110D

Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 5-10 ohm-cm,25pcs/Pack Conductive Ceramic Substrates Growing Method: Bridgman methodSilicon single crystal wafer (111) orientation 6" Diameter x (0. 65 0. 7) mm P type, boron doped Resistivity: 5 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) One side polished Packed in 25pcs group box Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater