Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm Conventional Net Weight 100 kg Shipping

Net Weight 100 kg Shipping Weight & Dimension 160 lbs

3 mm +/- 0

Chemical Engineering

OD:    214 mm

15mm after crimping (Original O

Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm Conventional Net Weight 100 kg ShippingThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4 " Silicon wafer Oxide layer thickness: 100 nm ( 1000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished