Si Wafer (111) 2" dia x 0.5 mm, 2SP, P type, B doped, R:1 - 10 ohm-cm - SIBc50D05C2R1 CeO2 (Epi-film) Polish: One side EPI polished

Polish:          One side EPI polished by CMP tecnology with less sub-surface lattice damage

Dimensions: 18

Sellmeier Equation ( l in mm )  ho2 (l) = 4

0mm  +/-0

6mm(D) x 3

Si Wafer (111) 2" dia x 0.5 mm, 2SP, P type, B doped, R:1 - 10 ohm-cm - SIBc50D05C2R1 CeO2 (Epi-film) Polish: One side EPI polishedSingle crystal Silicon Conductive type: P type Boron doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (111) + 1o Polish: Two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner