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Ga2O3 - Beta, Single Crystal Substrate, <-201> ori, 10x10x0.6mm, 1SP - GaO101006C1ori201US5 Be Growth method
Ga2O3 - Beta, Single Crystal Substrate, <-201> ori, 10x10x0.6mm, 1SP - GaO101006C1ori201US5 Be Growth method
$860.20
Description
Growth method
Casting mold up to Ø8 × 75 mm
before the operation
please choose vacuum flanges at the related products below
Resistivity:4
Ga2O3 - Beta, Single Crystal Substrate, <-201> ori, 10x10x0.6mm, 1SP - GaO101006C1ori201US5 Be Growth methodSubstrate Specifications: Chmistry: Ga2O3 ( Made in China) Structure: Monoclinic Lattice Constant: a=12. 23A, b=3. 04A, c=5. 80A, =103. 7 Orientation: < 201> + 0. 7 ( Please pay attention a, b, c axis defination above ) Type Dopant: N type Sn doped Size: 10x10 x 0. 6 mm Polish: one side polished Surface roughness: < 5A
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