Home
»
»
Ge Substrate: (100)+/- 2 degree, 10x10 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm CsPbBr3 Size: 10x10x0
Ge Substrate: (100)+/- 2 degree, 10x10 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm CsPbBr3 Size: 10x10x0
$52.84
Description
Size: 10x10x0
Polishing: Two sides polished
Parameters: Milling time
8 thermocouple input channels
Once power is recovered
Ge Substrate: (100)+/- 2 degree, 10x10 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm CsPbBr3 Size: 10x10x0Ge Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100)+ 2 degree Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 10 15 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
+/- 2 degree, 10x10 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm CsPbBr3 Size: 10x10x0){kind=link}