MF115300 - SEMI MF1153 - Test Method for Characterization of Metal-Oxide Silicon (MOS) Structures by Capacitance-Voltage Measurements Revision:SEMI MF1153-92 (Reapproved 2002) - Superseded SEMI E69-0298 (first published)

SEMI E69-0298 (first published)

本仕様は，global Silicon Wafer Committeeで技術的に承認されている。現版は，2010年8月27日 ，global Audits & Reviews Subcommitteeにて発行が承認された。2010年10月にwww

org in April 2017

This Specification defines the voltage sag immunity required for semiconductor processing

SEMI D45-1019 (Reapproved 0125)

MF115300 - SEMI MF1153 - Test Method for Characterization of Metal-Oxide Silicon (MOS) Structures by Capacitance-Voltage Measurements Revision:SEMI MF1153-92 (Reapproved 2002) - Superseded SEMI E69-0298 (first published)Net carrier density present near the silicon oxide interface may constitute an important acceptance requirement. Where there is not significant compensation by impurities of the opposite conductivity type, the material resistivity may be determined from this carrier density using SEMI MF723. Flatband voltage is an important parameter in the manufacture of MOS devices. Its value is dependent on the work function difference between the silicon and the