M06600 - SEMI M66 - Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique StdPbc-0120 SEMI E78-0912 (technical revision)

SEMI E78-0912 (technical revision)

By reducing costs and increasing functionality

The other areas (electric characteristics

The principles of this Practice may be adapted to determine the uniformity of bulk silicon wafer properties such as interstitial oxygen content and resistivity

1-1101 (technical revision)

M06600 - SEMI M66 - Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique StdPbc-0120 SEMI E78-0912 (technical revision)Continued scaling of CMOS integrated circuit dimensions is reaching a point where materials changes as well as lithographic advances are required to meet the projections of Moores Law and the International Technology Roadmap for Semiconductors. As gate dielectric thickness approaches 1 nm, both the gate dielectric and electrode materials that have been in common usageSiO2, and doped polysiliconare displaying characteristics that are unacceptable for