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G04600 - SEMI G46 - Test Method for Thermal Transient Testing for Die Attachment Evaluation of Integrated Circuits StdPbc-0616 The following areas are to
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Description
The following areas are to be addressed in this Document:
SEMI E16-90 (Reapproved 0699)
This system appears to the equipment to be a 300 mm FOUP (except that only the volume around the middle wafer may be accessible)
This Test Method defines selected terms and a test method for measuring corresponding parameters
and weld strength for use in semiconductor manufacturing applications
G04600 - SEMI G46 - Test Method for Thermal Transient Testing for Die Attachment Evaluation of Integrated Circuits StdPbc-0616 The following areas are toEvaluation of semiconductor die attachment integrity using the thermal transient techniques as implemented by the Electrical Test Method on either thermal test chips or active devices. Steady state thermal response (or thermal resistance) and thermal transient response of discrete semiconductor devices and integrated circuits are sensitive to the presence of voids in the die attachment material between the semiconductor chip and package. These voids
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